Part number:
TW140N120C
Manufacturer:
File Size:
511.35 KB
Description:
Silicon n-channel mosfet.
TW140N120C Datasheet (511.35 KB)
* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0
TW140N120C Datasheet (511.35 KB)
TW140N120C
511.35 KB
Silicon n-channel mosfet.
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