IRF620 Datasheet - TRANSYS Electronics

www.DataSheet4U.com IRF620 Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D G S N Channel Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum.

Unless stated Otherwise Symbol Parameter Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage Test Conditions VDS = 200VDC, VGS = 0VDC VDS = 160VDC, VGS = 0VDC Tj=125 C VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA Value Min 200 Typ Max Unit Volt µA nA nA Volt V(BR)