Part number:
2SA1300
Manufacturer:
TRANSYS
File Size:
83.44 KB
Description:
Plastic-encapsulated transistors.
* Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
2SA1300
TRANSYS
83.44 KB
Plastic-encapsulated transistors.
📁 Related Datasheet
2SA1300 - TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications Medium Power Amplifier Applications
2SA1300
Unit: mm
·.
2SA1300 - PNP EPITAXIAL SILICON TRANSISTOR
(UTC)
UTC 2SA1300
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXAL TYPE DESCRIPTION
*Strobo Flash Applications. *Medium Power Amplifier Applications..
2SA1300 - PNP Transistor
(Dc Components)
DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use.
2SA1300 - PNP Transistor
(SeCoS)
2SA1300
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-2 A, -20 V PNP Plastic Encapsulated Transist.
2SA1300 - PNP Silicon Epitaxial Planar Transistor
(BLUECOLOUR)
2SA1300 PNP Silicon Epitaxial Planar Transistor
for strobo flash and medium power amplifier applications.
The transistor is subdivided into three gro.
2SA1300 - SILION PNP TRANSISTOR
(LZG)
2SA1300(3CG1300)
PNP /SILION PNP TRANSISTOR
:,。
Purpose: Strobo flash, medium power amplifier applications.
:,,。
Features: High DC current gain, ex.
2SA1301 - Silicon PNP Transistor
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3280 . Remend for 80W High Fidelity Audio Frequency.
2SA1301 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1301
DESCRIPTION ·With TO-3PL package ·Complemen.