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2SA1306A - PNP Transistor

2SA1306A Description

isc Silicon PNP Power Transistors .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A. Complement to Type 2.

2SA1306A Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SA1306 -160 V 2SA1306A -180 2SA1306 -160 VCEO Collector-Emitter Voltage V 2SA1306A -180 VEBO Emitter-Base Voltag

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Datasheet Details

Part number
2SA1306A
Manufacturer
INCHANGE
File Size
184.58 KB
Datasheet
2SA1306A-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SA1306A-like datasheet