Part number:
2SD1802
Manufacturer:
TRANSYS
File Size:
91.03 KB
Description:
Npn transistor.
* Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-251 TO-252-2 6. 5 0¡ À0. 10 5. 3 0¡ À0. 05 0. 5 1¡ À0 . 03 2 . 30¡ À0. 05 5¡ ã 5. 50¡ 0À. 10 14. 70 0. 80¡
2SD1802
TRANSYS
91.03 KB
Npn transistor.
📁 Related Datasheet
2SD180 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage-
: VCE(sa.
2SD1800 - NPN Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SD1801 - Bipolar Transistor
(ON Semiconductor)
Ordering number : EN2112C
2SB1201/2SD1801
Bipolar Transistor
(–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
http://onsemi.
Applications
.
2SD1801 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1801
DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i.
2SD1801 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number : EN2112C
2SB1201/2SD1801
SANYO Semiconductors
DATA SHEET
2SB1201/2SD1801
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current.
2SD1802 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1802
DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i.
2SD1802 - NPN Epitaxial Planar Silicon Transistors
(GME)
Production specification
NPN Epitaxial Planar Silicon Transistors
2SD1802
FEATURES
Adoption of FBET,MBIT processes.
Pb
Large current capacit.
2SD1802 - Bipolar Transistor
(ON Semiconductor)
2SB1202/2SD1802
Bipolar Transistor
(–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA
Features
• Adoption of FBET and MBIT Processes • Large Cur.
