TGAN25N120FDR Datasheet | TRinno

Features - 1200V Field Stop Trench Technology - High Speed Switching - Low Conduction Loss - Positive Temperature Coefficient - Easy Parallel Operation - Short Circuit Withstanding Time 5μs - Ro HS pliant - JEDEC Qualification Applications UPS, Welder, Inverter, Solar Field Stop Trench IGBT E GC Device TGAN25N120FDR Package TO-3PN Marking TGAN25N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES ICM IF TJ TSTG TL Value 1200 ±20 50 25 75 25 338 135 -55 ~ 150 -55 ~ 150 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC...