Datasheet4U Logo Datasheet4U.com

TGAN25N120FDR Field Stop Trench IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

.

📥 Download Datasheet

Preview of TGAN25N120FDR PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
TGAN25N120FDR
Manufacturer
TRinno
File Size
967.17 KB
Datasheet
TGAN25N120FDR-TRinno.pdf
Description
Field Stop Trench IGBT

Features

* 1200V Field Stop Trench Technology
* High Speed Switching
* Low Conduction Loss
* Positive Temperature Coefficient
* Easy Parallel Operation
* Short Circuit Withstanding Time 5μs
* RoHS Compliant

Applications

* UPS, Welder, Inverter, Solar TGAN25N120FDR Field Stop Trench IGBT E GC Device TGAN25N120FDR Package TO-3PN Marking TGAN25N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 1

TGAN25N120FDR Distributors

📁 Related Datasheet

  • TGA1045-EPU - Ku Band Power Amplifier (TriQuint Semiconductor)
  • TGA1055-EPU - Ka Band 2 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1071-EPU - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)
  • TGA1073A-SCC - 26- 34 GHz Medium Power Amplifier (TriQuint Semiconductor)
  • TGA1073B-SCC - 27-32 GHz 0.7 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1073C-SCC - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)

📌 All Tags

Field Stop Trench IGBT TRinno
TRinno TGAN25N120FDR-like datasheet