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Features
• 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN25N120FDR
Field Stop Trench IGBT
E GC
Device TGAN25N120FDR
Package TO-3PN
Marking TGAN25N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
IC
ICM IF
PD
TGAN25N120FDR Datasheet
