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TGAN30N120FD - Field Stop Trench IGBT

Datasheet Summary

Features

  • 1200V Field Stop Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet preview – TGAN30N120FD

Datasheet Details

Part number TGAN30N120FD
Manufacturer TRinno
File Size 0.96 MB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN30N120FD Datasheet
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Full PDF Text Transcription

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES I
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