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TGAN30N120FD - Field Stop Trench IGBT

Key Features

  • 1200V Field Stop Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet Details

Part number TGAN30N120FD
Manufacturer TRinno
File Size 0.96 MB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN30N120FD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES I