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TGAN30N60FDR - Field Stop Trench IGBT

Datasheet Summary

Features

  • 600V Field Stop Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy Parallel Operation.
  • Short Circuit Withstanding Time 5μs.
  • RoHS Compliant.
  • JEDEC Qualification.

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Datasheet preview – TGAN30N60FDR

Datasheet Details

Part number TGAN30N60FDR
Manufacturer TRinno
File Size 0.97 MB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN30N60FDR Datasheet
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Full PDF Text Transcription

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification Applications : UPS, Welder, Inverter, Solar TGAN30N60FDR Field Stop Trench IGBT E GC Device TGAN30N60FDR Package TO-3PN Marking TGAN30N60FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF PD
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