Datasheet4U Logo Datasheet4U.com

TGAN40N120FDR Field Stop Trench IGBT

TGAN40N120FDR Description

.

TGAN40N120FDR Features

* 1200V Field Stop Trench Technology
* High Speed Switching
* Low Conduction Loss
* Positive Temperature Coefficient
* Easy Parallel Operation
* Short Circuit Withstanding Time 5μs
* RoHS Compliant

TGAN40N120FDR Applications

* UPS, Welder, Inverter, Solar TGAN40N120FDR Field Stop Trench IGBT E GC Device TGAN40N120FDR Package TO-3PN Marking TGAN40N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 1

📥 Download Datasheet

Preview of TGAN40N120FDR PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TGAN40N120FDR
Manufacturer
TRinno
File Size
0.97 MB
Datasheet
TGAN40N120FDR-TRinno.pdf
Description
Field Stop Trench IGBT

📁 Related Datasheet

  • TGA1045-EPU - Ku Band Power Amplifier (TriQuint Semiconductor)
  • TGA1055-EPU - Ka Band 2 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1071-EPU - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)
  • TGA1073A-SCC - 26- 34 GHz Medium Power Amplifier (TriQuint Semiconductor)
  • TGA1073B-SCC - 27-32 GHz 0.7 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1073C-SCC - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)
  • TGA1073G-SCC - 19 - 27 GHz Medium Power Amplifier (TriQuint Semiconductor)
  • TGA1081-EPU - 26-29 GHz Medium Power Amplifier (TriQuint Semiconductor)

📌 All Tags

TRinno TGAN40N120FDR-like datasheet