TMT3N30G - N-channel MOSFET

Datasheet Details

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification D Device TMT3N30G Package SOT223 TMT3N30G VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.15 W(max) @ VGS= 10 V RDS(on) = 1.73 W(typ) @ VGS= 10 V S D G Marking TMT3N30G D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Av.

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Published: Jun 16, 2016 |