TMT3N40ZG - N-channel MOSFET

Datasheet Details

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification.
Improved ESD performance Device TMT3N40ZG D Package SOT-223 VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V S D G G Marking TMT3N40ZG D S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Sing.

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Published: Jun 16, 2016 |