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BDX63B - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

This page provides the datasheet information for the BDX63B, a member of the BDX63 NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR family.

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Datasheet Details

Part number BDX63B
Manufacturer TT
File Size 552.52 KB
Description NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
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NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BDX63 BDX63A BDX63B VCEO VCBO VEBO Drain – Source Voltage Gate – Source Voltage Continuous Drain Current, Per Device 60V 80V 100V 80V 100V 120V 5V IC Collector Current ICM Collector Current (peak) IB Base Current Ptot Total Power Dissipation @ TC = 25°C TJ Junction Temperature Range 8A 12A 150mA 90W -55 to +200°C Tstg Storage Temperature Range -65 to +200°C BDX63C 120V 140V THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.
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