BUP51
TT
190.47kb
Silicon multi-epitaxial npn transistor.
TAGS
📁 Related Datasheet
BUP50A - NPN Transistor
(Seme LAB)
BUP50A
MECHANICAL DATA Dimensions in mm
NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR
1.57 (0.062)
25.4 (1.0) 10.92 (0.430)
FEATUR.
BUP51 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation .
BUP52 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot va.
BUP52 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR
(TT)
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
BUP52
• Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch.
BUP53 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR
(TT)
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
BUP53
• Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch.
BUP54 - NPN Transistor
(Seme LAB)
BUP54
MECHANICAL DATA Dimensions in mm
3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5.
BUP54 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP54
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
BUP54 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR
(TT)
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
BUP54
• Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch.
BUP56 - NPN Transistor
(Seme LAB)
BUP56
MECHANICAL DATA Dimensions in mm
NPN MULTI-EPITAXIAL TRANSISTOR
15.49 (0.610) 16.26 (0.640)
4.69 5.31 1.49 2.49
(0.185) (0.209) (0.059) (0.0.
BUP06CN015E-01 - 60V Radiation Tolerant power MOSFET
(Infineon)
BUP06CN015E-01
60V Radiation Tolerant power MOSFET
BUP06CN015E-01
Features • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dose.