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BUX10 SILICON MULTI-EPITAXIAL NPN TRANSISTOR

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Description

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 * High Current Capability.* Hermetic TO3 Metal package.* Designed For Switchin.

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Datasheet Specifications

Part number
BUX10
Manufacturer
TT
File Size
185.54 KB
Datasheet
BUX10-TT.pdf
Description
SILICON MULTI-EPITAXIAL NPN TRANSISTOR

Applications

* Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector
* Base Voltage 160V VCEX Collector
* Emitter Voltage VBE = -1.5V 160V VCEO Collector
* Emitter Voltage 125V VEBO Emitter
* Base Voltage 7V I

BUX10 Distributors

📁 Related Datasheet

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  • BUX11A - HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR (ETC)
  • BUX11N - Bipolar NPN Device (Seme LAB)
  • BUX11P - Silicon NPN Power Transistor (Inchange Semiconductor)

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR TT
TT BUX10-like datasheet