IRFN5210 Datasheet - TT

IRFN5210 P-CHANNEL POWER MOSFET

P-CHANNEL POWER MOSFET IRFN5210 Low RDS(on) Power MOSFET Transistor, Fully Avalanche Rated Hermetic Ceramic Surface Mount package Designed For Fast Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain Source Voltage -100V VGS Gate Source Voltage ±20V ID Continuous Drain Current Tc = 25°C -34A ID Continuous Drain Current Tc = 100°C -24A IDM Pulsed Drain .

IRFN5210 Datasheet (455.17 KB)