* s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Contin
IRFN044
International Rectifier
205.10 KB
Power mosfet n-channel.
Previous Datasheet
www.DataSheet4U.com
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1545
HEXFET® POWER MOSFET
60 Volt, 0.040 Ω HEXFET
HEXF.
📁 Related Datasheet
IRFN044SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN054 POWER MOSFET N-CHANNEL (International Rectifier)
IRFN054SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN130SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN140 POWER MOSFET N-CHANNEL (International Rectifier)
IRFN140SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN150 POWER MOSFET (International Rectifier)
IRFN150SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN214B 250V N-Channel MOSFET (Fairchild Semiconductor)
IRFN240 POWER MOSFET N-CHANNE (International Rectifier)
