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IRFN214B

250V N-Channel MOSFET

IRFN214B Features

* 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS ! S Absolute Maximum Ratings S

IRFN214B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFN214B Datasheet (643.17 KB)

Preview of IRFN214B PDF

Datasheet Details

Part number:

IRFN214B

Manufacturer:

Fairchild Semiconductor

File Size:

643.17 KB

Description:

250v n-channel mosfet.

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TAGS

IRFN214B 250V N-Channel MOSFET Fairchild Semiconductor

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