Part number:
IRFN214B
Manufacturer:
Fairchild Semiconductor
File Size:
643.17 KB
Description:
250v n-channel mosfet.
IRFN214B_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
IRFN214B Features
* 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS ! S Absolute Maximum Ratings S
IRFN214B_FairchildSemiconductor.pdf
Datasheet Details
IRFN214B
Fairchild Semiconductor
643.17 KB
250v n-channel mosfet.
📁 Related Datasheet
📌 All Tags