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IRFNL210B

200V N-Channel MOSFET

IRFNL210B Features

* 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92L IRFNL Series ! GDS S Absolute Maximum Ratings

IRFNL210B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFNL210B Datasheet (716.09 KB)

Preview of IRFNL210B PDF

Datasheet Details

Part number:

IRFNL210B

Manufacturer:

Fairchild Semiconductor

File Size:

716.09 KB

Description:

200v n-channel mosfet.

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IRFNL210B 200V N-Channel MOSFET Fairchild Semiconductor

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