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2SB1561-Q - Transistor

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Features

  • ¡ñ Collector Current Capability IC=-2A ¡ñ Collector Emitter Voltage V CEO=-60V ¡ñ Low saturation Voltage typically VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA 1 +0.1 0.48-0.1 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 3. Gate ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector - Base Voltage Collector - E.

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Datasheet Details

Part number 2SB1561-Q
Manufacturer TY Semiconductor
File Size 343.67 KB
Description Transistor
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Product specification 2SB1561-Q SOT-89 Unit: mm 1.50 +0.1 -0.1 ¡öFeatures ¡ñ Collector Current Capability IC=-2A ¡ñ Collector Emitter Voltage V CEO=-60V ¡ñ Low saturation Voltage typically VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA 1 +0.1 0.48-0.1 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 3. Gate ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCBO VCEO V EBO IC IC P Collector Power Dissipation Junction Temperature Storage Temperature range PC P CM TJ Ts tg Rating -60 -60 -6 -0.5 -6 0.
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