TSM7N60 Datasheet - Taiwan Semiconductor Company

TSM7N60 600V N-Channel Power MOSFET

The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

TSM7N60 Features

* Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 28nC (Typ.) Low Crss typical @ 12pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM7N60CZ C0 TSM7N60CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Ra

TSM7N60_TaiwanSemiconductorCompany.pdf