TSM7N60 Datasheet - Taiwan Semiconductor Company

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TSM7N60 600V N-Channel Power MOSFET

Preliminary TSM7N60 www.DataSheet4U.com 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V).
The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Details

Part number:

TSM7N60

Manufacturer:

Taiwan Semiconductor Company

File Size:

628.76 KB

Description:

600V N-Channel Power MOSFET

Features

* Low RDS(ON) 1.2Ω (Max. ) Low gate charge typical @ 28nC (Typ. ) Low Crss typical @ 12pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM7N60CZ C0 TSM7N60CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Ra

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: Preliminary

TSM7N60 Distributors

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TSM7N60 600V N-Channel Power MOSFET Taiwan Semiconductor Company

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