TSM70N600 Datasheet (Taiwan Semiconductor)

TSM70N600, N-Channel Power MOSFET

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TSM70N600 Features

* Super-Junction technology

* High performance due to small figure-of-merit

* High ruggedness performance

* High commutation performance APPLICATION

* Power Supply

* Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 700 V 0.6 Ω 12.6 nC ITO-2