MBR30L60CT

Dual Common Cathode Schottky Rectifier

Taiwan Semiconductor

MBR30L60CT Features

* - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammabili

MBR30L60CT General Description

G Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) PEAK FORWARD SURG.

MBR30L60CT Datasheet (197.25 KB)

MBR30L60CT Datasheet Preview — Preview of MBR30L60CT PDF

Datasheet Details

Part number:

MBR30L60CT

Manufacturer:

Taiwan Semiconductor

File Size:

197.25 KB

Description:

Dual common cathode schottky rectifier.

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MBR30L60CT Dual Common Cathode Schottky Rectifier Taiwan Semiconductor

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MBR30L60CT Features

MBR30L60CT General Description

Datasheet Details

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