TSM018NA03CR Datasheet - Taiwan Semiconductor

TSM018NA03CR, N-Channel Power MOSFET

TSM018NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 185A, 1.8mΩ

Features

* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* 100% UIS and Rg tested
* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE U

Applications

* DC-DC Converters
* Battery Power Management
* ORing FET/Load Switching PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre

TSM018NA03CR-TaiwanSemiconductor.pdf