TSM033NB04LCR Datasheet - Taiwan Semiconductor

TSM033NB04LCR, N-Channel Power MOSFET

TSM033NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 121A, 3.3mΩ .

Features

* Low RDS(ON) to minimize conductive losses
* Logic level
* Low gate charge for fast power switching
* 100% UIS and Rg tested.
* 175°C Operating Junction Temperature
* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to

Applications

* BLDC Motor Control
* Battery Power Management
* DC-DC converter
* Secondary Synchronous Rectification PDFN56 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 40 V VGS = 10V 3.3 RDS(on) (max) mΩ VGS = 4.5V 4 Qg 40 nC Note: MSL 1 (Moisture Sensitivity Level) per J-

TSM033NB04LCR-TaiwanSemiconductor.pdf