TSM120N06LCR Datasheet - Taiwan Semiconductor

TSM120N06LCR N-Channel Power MOSFET

TSM120N06LCR Features

* Low RDS(ON) to minimize conductive losses

* Logic level

* Low gate charge for fast power switching

* 100% UIS and Rg tested

* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

* Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS

Datasheet Details

TSM120N06LCR

Taiwan Semiconductor

361.12 KB

N-channel power mosfet.

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