TSM12N65 Datasheet - Taiwan Semiconductor

TSM12N65 650V N-Channel Power MOSFET

The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Fe.

TSM12N65 Features

* Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

TSM12N65 Datasheet (482.84 KB)