TSM12N65 - 650V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Part number	TSM12N65
Manufacturer	Taiwan Semiconductor
File Size	482.84 KB
Description	650V N-Channel Power MOSFET
Datasheet	TSM12N65_TaiwanSemiconductor.pdf

The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Low RDS(ON) 0.68Ω (Typ. ) Low gate charge typical @ 41nC (Typ. ) Low Crss typical @ 14.6pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single P.

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Published: Jan 4, 2014 |