TSM12N65 650V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A.
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number: TSM12N65
Manufacturer: Taiwan Semiconductor
File Size: 482.84 KB
Datasheet: TSM12N65_TaiwanSemiconductor.pdf
Description: 650V N-Channel Power MOSFET

Features

* Low RDS(ON) 0.68Ω (Typ. ) Low gate charge typical @ 41nC (Typ. ) Low Crss typical @ 14.6pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A10 Free Datasheet http://www. datasheet4u. com/

TSM12N65 Distributors

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TSM12N65 650V N-Channel Power MOSFET Taiwan Semiconductor

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