TFP730 Datasheet (Tak Cheong Electronics)

TFP730, N-Channel Power MOSFET

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is well suit

TFP730 Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. D G S ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VG