TFP70N06 Datasheet (Tak Cheong Electronics)

TFP70N06, N-Channel Power MOSFET

This N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is well sui

TFP70N06 Features

* Avalanche energy specified Gate Charge (Typical 70nC) High Ruggedness G ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD EAS dv/dt TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipatio