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TFP70N06 Datasheet - Tak Cheong Electronics

TFP70N06 N-Channel Power MOSFET

This N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well sui.

TFP70N06 Features

* Avalanche energy specified Gate Charge (Typical 70nC) High Ruggedness G ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD EAS dv/dt TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipatio

TFP70N06 Datasheet (343.66 KB)