Part number:
S23P100D15
Manufacturer:
Tamura
File Size:
237.52 KB
Description:
Hall effect current sensors
S23P100D15 Datasheet (237.52 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Tamura Corporation of America | S23P100D15 | HALL EFFECT CURRENT TRANSDUCER | Richardson RFPD | 0 | 0 |
$0
|
S23P100D15 Datasheet (237.52 KB)
S23P100D15
Tamura
237.52 KB
Hall effect current sensors
* Closed Loop type Current or voltage output Conversion ratio K = 1:2000 Printed circuit board mounting Integrated primary Insulated plastic case according to UL94V0 Advantage:
📁 Related Datasheet
S23P50D15 - Hall Effect Current Sensors
(Tamura)
Hall Effect Current Sensors S23P***D15 Series
Features:
• • • • • • Closed Loop type Current or voltage output Conversion ratio K = 1:2000 Printed cir.
S23 - Schottky Rectifiers
(Fairchild Semiconductor)
SS22-S210
SS22 - S210
Features • • •
Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters fr.
S2301 - N-channel SiC power MOSFET
(Rohm)
S2301
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 80mW 40A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching spee.
S2303 - N-channel SiC power MOSFET
(ROHM)
S2303
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200 80m 40A*1
Datasheet
Features 1) Low on-resistance 2) Fast switching speed .
S2305 - N-channel SiC power MOSFET
(Rohm)
S2305
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 450mW 10A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching spe.
S2306 - power MOSFET
(ROHM)
S2306
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 160mW 22A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching spe.
