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1SS200 - Diode

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Datasheet Details

Part number 1SS200
Manufacturer Toshiba Semiconductor
File Size 173.73 KB
Description Diode
Datasheet download datasheet 1SS200 Datasheet
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 (*) 2 (*) 200 mA A mW Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g.
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