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1SS200 - Diode

1SS200 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (t.

1SS200 Applications

* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a

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📁 Related Datasheet

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Toshiba Semiconductor 1SS200-like datasheet