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1SS200 Datasheet - Toshiba Semiconductor

1SS200 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 ( ) mA Average forward current Surge current (10ms) Po.

1SS200_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS200

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

173.73 KB

Description:

Diode.

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1SS200 1SS200 Diode Toshiba Semiconductor

1SS200 Distributor