TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 ( ) mA Average forward current Surge current (10ms) Po
1SS200_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS200
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
173.73 KB
Description:
Diode.