1SS200
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Unit: mm z Low forward voltage
: VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
300 (- ) m A
Average forward current Surge current (10ms) Power dissipation
IO IFSM
100 (- ) 2 (- ) 200 m A A m W
Junction temperature Storage temperature range
Tj 125 °C
Tstg
- 55~125 °C JEDEC JEITA
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Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-4E2B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.13g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within...
