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1SS201 - Diode

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Datasheet Details

Part number 1SS201
Manufacturer Toshiba Semiconductor
File Size 145.79 KB
Description Diode
Datasheet download datasheet 1SS201 Datasheet
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) 1SS201 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 200 mW JEDEC ― Junction temperature Storage temperature range Tj Tstg 125 °C EIAJ ― −55~125 °C TOSHIBA Weight: 0.13g 1−4E2A (*) Unit rating. Total rating = Unit rating ×1.5.
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