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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
1SS200
Unit: mm
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM
P
100 (*) 2 (*) 200
mA A mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125 °C JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g.
1SS200 Datasheet
