1SS200 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2p F (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage 85 V Reverse voltage VR 80 V Maximum (peak) forward current 300 (- ) m A Average forward current Surge current (10ms) Power dissipation IO IFSM 100 (- ) 2 (- ) 200 m A A m W Junction temperature Storage temperature range Tj 125 °C Tstg - 55~125 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-4E2B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.13g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (- ) Unit Rating. Total Rating = Unit Rating × 1.5. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test...