1SS250
1SS250 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
High Voltage, High Speed Switching Application
- Small package
: SC- 59
- Low forward voltage
: VF (2) = 0.90 V (typ.)
- Fast reverse recovery time : trr = 60 ns (max)
- Small total capacitance : CT = 1.5 p F (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300 m A
Average forward current
100 m A
Surge current (10 ms)
IFSM
Power dissipation
PD (Note 1, 3)
200 m W
PD (Note 2)
Junction temperature
Tj (Note 1)
°C
Tj (Note 2)
Storage temperature range
Tstg (Note...
