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1SS272 Datasheet - Toshiba Semiconductor

1SS272 - Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) 1SS272 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 <

1SS272_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS272

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

640.98 KB

Description:

Silicon epitaxial planar type diode.

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