1SS272 Datasheet, Diode, Toshiba Semiconductor

PDF File Details

Part number:

1SS272

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

640.98kb

Download:

📄 Datasheet

Description:

Silicon epitaxial planar type diode.

1SS272 Application

• Applications customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation

TAGS

1SS272

Toshiba Semiconductor

📁 Related Datasheet

1SS270 - Silicon Diode (Hitachi Semiconductor)
1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short .

1SS270 - SWITCHING DIODES (Leshan Radio Company)
.

1SS270 - Silicon Epitaxial Planar Diode (Renesas)
1SS270 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • Sh.

1SS270A - HIGH SPEED SWITCHING DIODE (EIC)
1SS270A FEATURES : • High switching speed: max. 3.5 ns • Continuous reverse voltage:max. 60 V • Peak reverse voltage:max. 70 V • Pb / RoHS Free MECHAN.

1SS270A - Silicon Diode (Hitachi Semiconductor)
1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166A (Z) Rev. 1 Aug.1995 Features • Low capacitance. (C = 3.0pF max) • Short .

1SS271 - Diode (Toshiba Semiconductor)
.

1SS200 - Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (t.

1SS201 - Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse r.

1SS201 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpo.

1SS220 - (1SS220 / 1SS221) SILICON SWITCHING DIODES (NEC)
.. .