1SV214
Toshiba ↗ Semiconductor
111.11 KB
Bariable capacitance diode.
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
TV Tuning
* High capacitance ratio: C2 V/C25 V = 6.5 (typ.)
* Low ser.
📁 Related Datasheet
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(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV215
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 10.5 (typ.) · Low series r.
1SV216 - Variable Capacitance Diode
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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Characteri.
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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1SV231 - Variable Capacitance Diode
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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· High capacitance ratio: C2 V/C25 V = 15 (typ.) · Excellent C-V .
