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1SV229 Datasheet - Toshiba Semiconductor

1SV229 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio Ultra low series resistance: rs = 0.2 Ω (typ.) Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the sign.

1SV229_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV229

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

150.77 KB

Description:

Variable capacitance diode.

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1SV229 1SV229 Variable Capacitance Diode Toshiba Semiconductor