1SV239
Toshiba ↗ Semiconductor
150.97 KB
Variable capacitance diode.
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV239
1SV239
VCO for UHF Radio
* Ultra low series resistance: rs = 0.44 Ω.
📁 Related Datasheet
1SV230 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV230
CATV Converter 1st OSC Tuning
· High capacitance ratio: C2 V/C20 V = 8 (typ.).
1SV231 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV231
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 15 (typ.) · Excellent C-V .
1SV232 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV232
1SV232
CATV Tuning
• High capacitance ratio: C2 V/C25 V = 10.5 (typ.) • Exc.
1SV233 - PIN Diode
(Sanyo Semicon Device)
Ordering number :EN3088B
1SV233
Silicon Epitaxial Type
PIN Diode for VHF, UHF, AGC Use
Features
· Very small-sized package facilitates high-density .
1SV233 - Single PIN Diode
(ON Semiconductor)
Ordering number : EN3088C
1SV233
PIN Diode
Single PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=typ 5Ω, CP
http://onsemi.
Features
• Very small-.
1SV234 - PIN Diode
(Sanyo Semicon Device)
Ordering number :EN3089B
1SV234
Silicon Epitaxial Type
PIN Diode for VHF, UHF, AGC Applications
Features
· Series connection of 2 elements in an ult.
1SV237 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV237
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage .
1SV214 - BARIABLE CAPACITANCE DIODE
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
TV Tuning
· High capacitance ratio: C2 V/C25 V = 6.5 (typ.) · Low series resi.
