1SV252 Datasheet - Toshiba Semiconductor

1SV252 Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV252 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Forward voltage Total capacitance Series resistance VR IR = 10 mA IR VR = 50 V VF IF = 50 .

1SV252 Datasheet (78.00 KB)