2SA1020 Datasheet - Toshiba Semiconductor

2SA1020 PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SC2655 2SA1020 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emit.

2SA1020_ToshibaSemiconductor.pdf