2SA1362 Datasheet - Toshiba Semiconductor

2SA1362 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications 2SA1362 Unit: mm High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = 0.2 V (max) (IC = 400 mA, IB = 8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO .

2SA1362_ToshibaSemiconductor.pdf