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2SA1362 - Silicon PNP Transistor

2SA1362 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications 2SA1362 U.

2SA1362 Applications

* Power Switching Applications 2SA1362 Unit: mm
* High DC current gain: hFE = 120 to 400
* Low saturation voltage: VCE (sat) =
* 0.2 V (max) (IC =
* 400 mA, IB =
* 8 mA)
* Suitable for driver stage of small motor
* Small package Absolute Maximum

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Silicon PNP Transistor Toshiba Semiconductor
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