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2SC4881 NPN TRANSISTOR

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm * Low saturation voltage: VCE (sa.

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Applications

* 2SC4881 Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (max)
* High-speed switching: tstg = 0.8 μs (typ. ) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltag

2SC4881 Distributors

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2SC4881 NPN TRANSISTOR Toshiba Semiconductor
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