2SC4881 Datasheet - Toshiba Semiconductor

2SC4881 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 0.8 μs (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current DC IC 5 A Pulse ICP 8 Base current IB 1 A Collector power dissipation T.

2SC4881 Datasheet (137.74 KB)