2SC4884 Datasheet - Sanyo Semicon Device

2SC4884 NPN TRANSISTOR

2SC4884 Features

* Adoption of MBIT process.

* Large allowable collector dissipation.

* High breakdown voltage (VCEO≥300V).

* Excellent high frequency characteristic (Cre=1.8pF typ).

* Usage of radial taping to meet automatic mounting. Specifications Package Dimensions unit:mm 2084B [2SC4884]

Datasheet Details

2SC4884

Sanyo Semicon Device

103.92 KB

Npn transistor.

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2SC4884 NPN TRANSISTOR Sanyo Semicon Device

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