* Adoption of MBIT process.
* Large allowable collector dissipation.
* High breakdown voltage (VCEO≥300V).
* Excellent high frequency characteristic (Cre=1.8pF typ).
* Usage of radial taping to meet automatic mounting. Specifications Package Dimensions unit:mm 2084B [2SC4884]
2SC4884
Sanyo Semicon Device
103.92 KB
Npn transistor.
Ordering number:EN4136
NPN Epitaxial Planar Silicon Transistor
2SC4884
High-Definition CRT Display Video Output Applications
Applications
* High.
📁 Related Datasheet
2SC4880 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4880
DESCRIPTION ·With TO-3PFM package ·High br.
2SC4880 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4880
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Mi.
2SC4881 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4881
High-Current Switching Applications
2SC4881
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4.
2SC4881 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4881
DESCRIPTION ·With TO-220F package ·Low sat.
2SC4881 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4881
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High Switchi.
2SC4883 - NPN TRANSISTOR
(Sanken electric)
2SC4883/4883A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) sAbsolute maximum ratings (Ta=25°C)
Symbol 2SC4883 2SC4883A VCBO .
2SC4883 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4883
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Complement .
2SC4883 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4883 2SC4883A
DESCRIPTION ·With TO-220F package.
