* Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate ant
2SC4826
Sanyo Semicon Device
26.82 KB
Npn transistor.
Ordering number : ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Outp.
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