Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency chara
✔ 2SC4826 Application
Applications
Package Dimensions
unit : mm 2084B
[2SA1852 / 2SC4826]
High definition CRT display video ou
2SC4829, Hitachi Semiconductor
2SC4829
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• High frequency characteristics fT = 1100 MHz Typ • High voltage and sm.