2SC4827 Datasheet - Sanyo Semicon Device

2SC4827 PNP/NPN Epitaxial Planar Silicon Transistor

2SC4827 Features

* Adoption of FBET process.

* High fT : fT=300MHz.

* High breakdown voltage : VCEO=200V.

* Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP.

* Possible to offer the 2SA1853/2SC4827 devices in a tepa reel packaging, which fa

Datasheet Details

2SC4827

Sanyo Semicon Device

107.37 KB

Pnp/npn epitaxial planar silicon transistor.

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