* Adoption of FBET process.
* High fT : fT=300MHz.
* High breakdown voltage : VCEO=200V.
* Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP.
* Possible to offer the 2SA1853/2SC4827 devices in a tepa reel packaging, which fa
2SC4827
Sanyo Semicon Device
107.37 KB
Pnp/npn epitaxial planar silicon transistor.
Ordering number:EN4717 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1853/2SC4827 High Definition CRT Display Video Output Applications Application.
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