* Adoption of FBET process.
* High Gain Bandwidth product (fT=400MHz).
* High breakdown voltage (VCEO=120V).
* Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP.
* Usage of radial taping to meet automatic mounting. 2.6 1.4
2SC4824
Sanyo Semicon Device
75.12 KB
Npn transistor.
Ordering number:ENN4132 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applicati.
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