2SC5376 Datasheet - Toshiba Semiconductor

2SC5376 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications 2SC5376 Unit: mm Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Co.

2SC5376_ToshibaSemiconductor.pdf