2SC5307 NPN TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm * High breakdown voltage: V.

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Datasheet Specifications

Part number: 2SC5307
Manufacturer: Toshiba ↗ Semiconductor
File Size: 112.17 KB
Datasheet: 2SC5307_ToshibaSemiconductor.pdf
Description: NPN TRANSISTOR

Applications

* 2SC5307 Unit: mm
* High breakdown voltage: VCEO = 400 V
* Low saturation voltage: VCE (sat) = 0.4 V (typ. ) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur

2SC5307 Distributors

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2SC5307 NPN TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC5307-like datasheet