* Fast speed (t f=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5302] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specificati
2SC5302
Sanyo Semicon Device
166.48 KB
Npn transistor.
Ordering number:EN5363B
NPN Triple Diffused Planar Silicon Transistor
2SC5302
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
📁 Related Datasheet
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Ordering number:EN5416A
NPN Triple Diffused Planar Silicon Transistor
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2SC5302 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage
:VCBO= 1500V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot v.
2SC5303 - NPN TRANSISTOR
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Ordering number:ENN6177
NPN Triple Diffused Planar Silicon Transistor
2SC5303
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
2SC5304LS - NPN TRANSISTOR
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NPN Triple Diffused Planar Silicon Transistor
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Inverter Lighting Applications
Features
· High breakdown voltage (V.
2SC5305 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage
:V(BR)CBO= 1200V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for .
2SC5305 - HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
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UNISONIC TECHNOLOGIES CO., LTD
2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
FEATURES
* High Hfe F.
2SC5305LS - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon Transistor
2SC5305LS
Inverter Lighting Applications
Features
· High breakdown voltage (V.
