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2SC5305 - NPN Transistor

2SC5305 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage :V(BR)CBO= 1200V (Min). High Speed Switching. Minimum Lot-to-Lot variations for robust device performance and reli.

2SC5305 Applications

* Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SC5305
Manufacturer
INCHANGE
File Size
208.82 KB
Datasheet
2SC5305-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SC5305-like datasheet