2SC5359 Datasheet - INCHANGE

2SC5359, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5359 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min). Complement to Type.

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2SC5359-INCHANGE.pdf

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Datasheet Details

Part number:

2SC5359

Manufacturer:

INCHANGE

File Size:

189.06 KB

Description:

NPN Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5

2SC5359 Distributors

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2SC5359 NPN Transistor INCHANGE

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